Conductive structure body and method for manufacturing the same

ABSTRACT

An exemplary embodiment of the present invention relates to a conductive structure body that comprises a darkening pattern layer having AlOxNy, and a method for manufacturing the same. The conductive structure body according to the exemplary embodiment of the present invention may prevent reflection by a conductive pattern layer without affecting conductivity of the conductive pattern layer, and improve a concealing property of the conductive pattern layer by improving absorbance. Accordingly, a display panel having improved visibility may be developed by using the conductive structure body according to the exemplary embodiment of the present invention.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to and the benefit of Korean PatentApplication No. 10-2011-0019598 filed in the Korean IntellectualProperty Office on Mar. 4, 2011, the entire contents of which areincorporated herein by reference.

TECHNICAL FIELD

The present specification relates to a conductive structure body and amethod for manufacturing the same.

BACKGROUND ART

Generally, a touch screen panel may be classified into the followingtypes according to a detection manner of signal. That is, there are aresistive type detecting a position pressed by pressure in a state wherea direct voltage is applied which changes a current or voltage value, acapacitive type using capacitance coupling in a state where analternating voltage is applied, an electromagnetic type detecting aselected position in a state where a magnetic field is applied as achange in voltage, and the like.

SUMMARY OF THE INVENTION

The present invention has been made in an effort to develop a technologyfor improving performance of various modes of touch screen panels in theart.

An exemplary embodiment of the present invention provides a conductivestructure body, comprising: a substrate; a conductive pattern layer; anda darkening pattern layer comprising AlOxNy (0≦x≦1.5, 0≦y≦1). X and ymean ratios of numbers of O and N atoms to one Al atom, respectively, inAlOxNy.

Another exemplary embodiment of the present invention provides aconductive structure body, comprising: a substrate; a conductive patternlayer; and a AlOxNy darkening pattern layer (x>0, y>0) satisfying thefollowing Equation 1.

$\begin{matrix}{1 < \frac{({Al}){at} \times 3}{{(O){at} \times 2} + {(N){at} \times 3}} < 2} & \left\lbrack {{Equation}\mspace{14mu} 1} \right\rbrack\end{matrix}$

X and y mean ratios of numbers of O and N atoms to one Al atom,respectively, in AlOxNy, and (Al)at represents an atomic content (at %)of Al, (O)at represents an atomic content (at %) of O, and (N)atrepresents an atomic content (at %) of N based on 100% of a content ofall elements represented by AlOxNy in Equation 1.

Another exemplary embodiment of the present invention provides a methodfor manufacturing a conductive structure body, comprising: forming aconductive layer on a substrate; forming a darkening layer comprisingAlOxNy (0≦x≦1.5, 0≦y≦1) before, after, or before and after theconductive layer is formed; and separately or simultaneously patterningthe conductive layer and the darkening layer.

Another exemplary embodiment of the present invention provides a methodfor manufacturing a conductive structure body, comprising: forming aconductive pattern layer on a substrate; and forming a darkening patternlayer comprising AlOxNy (0≦x≦1.5, 0≦y≦1) before, after, or before andafter the conductive pattern layer is formed.

Another exemplary embodiment of the present invention provides a methodfor manufacturing a conductive structure body, comprising: forming aconductive pattern layer on a substrate; and forming a darkening patternlayer comprising AlOxNy (x>0, y>0) having an atomic ratio represented byEquation 1 before, after, or before and after the conductive patternlayer is formed.

Another exemplary embodiment of the present invention provides a methodfor manufacturing a conductive structure body, comprising: forming aconductive layer on a substrate; forming a darkening layer comprisingAlOxNy (x>0, y>0) having an atomic ratio represented by Equation 1before, after, or before and after the conductive layer is formed; andseparately or simultaneously patterning the conductive layer and thedarkening layer.

Another exemplary embodiment of the present invention provides a touchscreen panel, including the conductive structure body.

Another exemplary embodiment of the present invention provides a displaydevice, comprising the conductive structure body.

Another exemplary embodiment of the present invention provides a solarbattery, comprising the conductive structure body.

The conductive structure body according to the exemplary embodiment ofthe present invention may prevent reflection by a conductive patternlayer without affecting conductivity of the conductive pattern layer,and improve a concealing property of the conductive pattern layer byimproving absorbance. Accordingly, a touch screen panel having improvedvisibility and a display device including the same may be developed byusing the conductive structure body according to the exemplaryembodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 to 3 are views illustrating a laminate structure of a conductivestructure body including a darkening pattern layer as an exemplaryembodiment of the present invention.

FIG. 4 illustrates an atomic percent according to an etching time of thedarkening pattern layer including AlOxNy of Example 1 as an exemplaryembodiment of the present invention.

FIG. 5 illustrates reflectance according to a wavelength of conductivestructure bodies of Example 1 and Comparative Example 1 as an exemplaryembodiment of the present invention.

DETAILED DESCRIPTION

Hereinafter, the present invention will be described in more detail.

In the present specification, a display device refers to monitors for aTV or a computer as a whole, and includes a display diode forming animage and a case supporting the display diode.

Examples of the display diode may comprise a plasma display panel (PDP),a liquid crystal display (LCD), an electrophoretic display, acathode-ray tube (CRT), an OLED display, and the like. An RGB pixelpattern for implementing an image and an additional optical filter maybe provided in the display diode.

Meanwhile, relating to a display device, as the spread of smart phones,tablet PCs, and IPTVs is accelerated, a demand for a touch function thatuses human hands as a direct input device without a separate inputdevice such as keyboards or remote controllers is growing. In addition,a multi-touch function for recognizing a specific point and taking notesis also required.

Currently, most commercially available touch screen panels (TSP) arebased on a transparent conductive ITO thin film, but have problems inthat a touch recognition speed is decreased and an additionalcompensation chip for overcoming the decrease should be introducedbecause of a RC delay due to relatively high surface resistance of theITO transparent electrode when a touch screen panel having a large areais applied (minimum 150 Ω/square, ELECRYSTA products manufactured byNitto Denko, Co., Ltd.).

The present inventors have studied a technology for replacing thetransparent ITO thin film by a metal fine pattern. In this regard, thepresent inventors found that in the case where Ag, Mo/Al/Mo, MoTi/Cu,and the like, which are metal thin films having high electricconductivity, are used as an electrode of a touch screen panel, when afine electrode pattern having a predetermined shape is to beimplemented, there is a problem in that the pattern is easily recognizedby the human eye in view of visibility due to high reflectance, andglaring and the like may occur due to high reflectance and haze value toexternal light. In addition, the present inventors found that a costlytarget is used during the manufacturing process or there are many caseswhere the process is complicated.

Accordingly, an exemplary embodiment of the present invention provides aconductive structure body that may be applied to a touch screen panelthat may differentiate from a known touch screen panel using anITO-based transparent conductive thin film layer and has an improvedconcealing property of a metal fine pattern electrode and improvedreflection and diffraction properties to external light.

The conductive structure body according to the exemplary embodiment ofthe present invention may comprise a darkening pattern layer comprisingAlOxNy (0≦x≦1.5, 0≦y≦1). X and y are independent to each other. X and ymay be specifically x+y>0, and more specifically x>0 and y>0. Even morespecifically, in the case of AlOxNy (0≦x≦0.6, 0.3≦y≦0.8), the case ismore effective to form the darkening pattern layer.

X and y mean ratios of numbers of O and N atoms to one Al atom,respectively, in AlOxNy.

The darkening pattern layer may comprise AlOxNy (x>0, y>0) having anatomic ratio represented by the following Equation 1.

$\begin{matrix}{1 < \frac{({Al}){at} \times 3}{{(O){at} \times 2} + {(N){at} \times 3}} < 2} & \left\lbrack {{Equation}\mspace{14mu} 1} \right\rbrack\end{matrix}$

X and y mean ratios of numbers of O and N atoms to one Al atom,respectively, in AlOxNy, and

(Al)at represents an atomic content (at %) of Al, (O)at represents anatomic content (at %) of O, and (N)at represents an atomic content (at%) of N based on 100% of a content of all atoms represented by AlOxNy inEquation 1.

Equation 1 is an equation provided in consideration of the atomiccontent (at %) measured by the XPS (X-ray photoelectron spectroscopy)and a chemical valence. The chemical valence of Al is 3, the chemicalvalence of O is 2, and the chemical valence of N is 3. If the value ofEquation 1 is more than 1, it means that Al is rich among Al, O, and N,and if the value is 1 or less, it means that Al is poor among Al, O, andN. For example, in terms of stoichiometry, in the case of Al₂O₃ or AlN,a relatively transparent phase is shown, and the value of Equation 1becomes 1. If the value obtained in Equation 1 is more than 1, since thecontent of metal atom Al is higher than that in the case of Al₂O₃ orAlN, an absorption coefficient is increased and a darkening layer isformed. If the value obtained in Equation 1 is more than 2, the contentof Al is more increased to form a metallic layer.

The extinction coefficient k of the conductive structure body accordingto the exemplary embodiment of the present invention may be 0.2 or moreand 2.5 or less, specifically 0.2 or more and 1.5 or less, and morespecifically 0.2 or more and 0.8 or less. If the extinction coefficientk is 0.2 or more, there is an effect facilitating darkening. Theextinction coefficient k may be called an absorption coefficient, and isan index defining how strong the conductive structure body absorbs lightat a predetermined wavelength and a factor determining transmittance ofthe conductive structure body. For example, in the case of thetransparent conductive structure body such as Al₂O₃ or AlN, k is lowerthan 0.2 and the k value is very low. However, as the number of metal Alatoms is increased, the k value is increased. If the amount of Al isexcessively increased to form the conductive structure body mostlyconsisting of metal, the conductive structure body becomes the metalthrough which transmission hardly occur but reflection mainly occurs,and the extinction coefficient k is more than 2.5, which is notpreferable.

The conductive structure body according to the exemplary embodiment ofthe present invention may further comprise a substrate and a conductivepattern layer. Herein, the darkening pattern layer may be provided onany one surface of the conductive pattern layer, or both surfaces of theconductive pattern layer.

The conductive structure body according to the exemplary embodiment ofthe present invention may comprise a substrate; a conductive patternlayer provided on the substrate; and a darkening pattern layer providedon the conductive pattern layer and including AlOxNy (0≦x≦1.5, 0≦y≦1).

The conductive structure body according to the exemplary embodiment ofthe present invention may comprise a substrate; a darkening patternlayer provided on the substrate and comprising AlOxNy (0≦x≦1.5, 0≦y≦1);and a conductive pattern layer provided on the darkening pattern layer.

The conductive structure body according to the exemplary embodiment ofthe present invention may comprise a substrate; a darkening patternlayer provided on the substrate and comprising AlOxNy (0≦x≦1.5, 0≦y≦1);a conductive pattern layer provided on the darkening pattern layer; anda darkening pattern layer provided on the conductive pattern layer andincluding AlOxNy (0≦x≦1.5, 0≦y≦1).

The conductive structure body according to the exemplary embodiment ofthe present invention may comprise a substrate; a conductive patternlayer provided on the substrate; and a darkening pattern layer providedon the conductive pattern layer and comprising AlOxNy (x>0, y>0)represented by Equation 1.

The conductive structure body according to the exemplary embodiment ofthe present invention may comprise a substrate; a darkening patternlayer provided on the substrate and comprising AlOxNy (x>0, y>0)represented by Equation 1; and a conductive pattern layer provided onthe darkening pattern layer.

The conductive structure body according to the exemplary embodiment ofthe present invention may comprise a substrate; a darkening patternlayer provided on the substrate and comprising AlOxNy (x>0, y>0)represented by Equation 1; a conductive pattern layer provided on thedarkening pattern layer; and a darkening pattern layer provided on theconductive pattern layer and comprising AlOxNy (x>0, y>0) represented byEquation 1.

The present inventors found a fact that light reflection and diffractionproperties by the pattern layer significantly affect visibility of theconductive metal fine pattern in a touch screen panel comprising theconductive metal fine pattern provided in an effective screen portion,and tried to improve this. Specifically, a problem by the reflectance ofthe conductive pattern due to high transmittance of the ITO was notlargely considered in a known ITO-based touch screen panel, but it wasfound that reflectance and darkening properties of the conductive metalfine pattern were important in the touch screen panel including theconductive metal fine pattern provided in the effective screen portion.

The darkening pattern layer may be introduced in order to decrease thereflectance of the conductive metal fine pattern and improve theabsorbance property in the touch screen panel according to the exemplaryembodiment of the present invention. The darkening pattern layer may beprovided on at least one surface of the conductive pattern layer in thetouch screen panel to largely prevent a decrease in visibility accordingto high reflectance of the conductive pattern layer.

In detail, since the darkening pattern layer has light absorptivity, thereflectance by the conductive pattern layer may be decreased bydecreasing the quantity of light that is incident on the conductivepattern layer and reflected from the conductive pattern layer. Inaddition, the darkening pattern layer may have low reflectance ascompared to that of the conductive pattern layer. Thereby, since thereflectance of light may be decreased as compared to the case where theuser directly observes the conductive pattern layer, visibility of theconductive pattern layer may be largely improved.

In the present specification, the darkening pattern layer means a layerthat has light absorptivity to decrease the quantity of light that isincident on the conductive pattern and light that is reflected from theconductive pattern layer, and may be represented by terms such as alight absorption pattern layer, a blackened pattern layer, and ablackening pattern layer in addition to the darkening pattern layer.

In the exemplary embodiment of the present invention, the reflectance ofthe darkening pattern layer may be 20% or less, specifically 15% orless, more specifically 10% or less, and even more specifically 5% orless, and 3% or less. The effect is increased as the reflectance isdecreased.

The reflectance may be measured in a direction of an opposite surface ofa surface that is in contact with the conductive pattern layer of thedarkening pattern layer. When the reflectance is measured in thisdirection, the reflectance may be 20% or less, specifically 15% or less,more specifically 10% or less, and even more specifically 5% or less,and 3% or less. The effect is increased as the reflectance is decreased.

In addition, the darkening pattern layer may be provided between theconductive pattern layer and the substrate, and measured in a substrateside. When the reflectance is measured in the substrate side, thereflectance may be 20% or less, specifically 15% or less, morespecifically 10% or less, and even more specifically 5% or less, and 3%or less. The effect is increased as the reflectance is decreased.

In the present specification, the reflectance means reflectance of lightof 550 nm that is incident at an angle of 90° C. on a surface to bemeasured after an opposite surface of the surface to be measured istreated by a perfect black layer.

In the exemplary embodiment of the present invention, the reflectance ofthe conductive structure body may be 20% or less, specifically 15% orless, more specifically 10% or less, and even more specifically 6% orless. The effect is increased as the reflectance is decreased.

In the present specification, when the incident light is 100%, thereflectance may be the measured value on the basis of the value at thewavelength of 550 nm among reflected light reflected by a target patternlayer or a conductive laminate on which light is incident, and this isbecause the reflectance of the wavelength of 550 nm is not generallylargely different from the entire reflectance.

In the conductive structure body according to the exemplary embodimentof the present invention, the darkening pattern layer may comprise afirst surface that is in contact with the conductive pattern layer and asecond surface facing the first surface. When the reflectance of theconductive structure body is measured at a side of the second surface ofthe darkening pattern layer, the reflectance (Rt) of the conductivestructure body may be calculated by the following Equation 2.

Reflectance (Rt)=reflectance of the substrate+closing ratio×reflectanceof the darkening pattern layer  [Equation 2]

In addition, in the case where the conductive structure body has aconstitution in which two kinds of conductive structure bodies arelaminated, the reflectance (Rt) of the conductive structure body may becalculated by the following Equation 3.

Reflectance (Rt)=reflectance of the substrate+closing ratio×reflectanceof the darkening pattern layer×2  [Equation 3]

In Equations 2 and 3, the reflectance of the substrate may bereflectance of a touch reinforced glass, and in the case where thesurface is a film, the reflectance of the substrate may be reflectanceof the film.

In addition, the closing ratio may be represented by an area ratio of aregion covered by the conductive pattern, that is, (1—opening ratio),based on a plane of the conductive structure body.

Accordingly, a difference between the case where there is the darkeningpattern layer and the case where there is no darkening pattern layerdepends on the reflectance of the darkening pattern layer. In thisregard, the reflectance (Rt) of the conductive structure body accordingto the exemplary embodiment of the present invention may be decreased by10 to 20%, 20 to 30%, 30 to 40%, 40 to 50%, or 50 to 70% as compared tothe reflectance (R0) of the conductive structure body having the sameconstitution, except that there is no darkening pattern layer. That is,in the case where in Equations 2 and 3, the closing ratio range ischanged from 1 to 10% and the reflectance range is changed from 1 to30%, the maximum reflectance decrease effect of 70% may be exhibited,and the minimum reflectance decrease effect of 10% may be exhibited.

In the conductive structure body according to the exemplary embodimentof the present invention, the darkening pattern layer comprises a firstsurface that is in contact with the conductive pattern and a secondsurface facing the first surface, and when the reflectance of theconductive structure body is measured at a side of the second surface ofthe darkening pattern, a difference between the reflectance (Rt) of theconductive structure body and the reflectance (R0) of the substrate maybe 40% or less, 30% or less, 20% or less, and 10% or less.

In the exemplary embodiment of the present invention, a refractive indexof the conductive structure body may be 0 or more and 3 or less.

In the exemplary embodiment of the present invention, a brightness valueL* of the conductive structure body may be 50 or less and morespecifically 30 or less based on a L*a*b* color value. The reflectanceis decreased as the brightness value is decreased to provide anadvantageous effect.

In the exemplary embodiment of the present invention, the surfaceresistance of the conductive structure body may be 1 Ω/square or moreand 300 Ω/square or less, specifically 1 Ω/square or more and 100Ω/square or less, more specifically 1 Ω/square or more and 50 Ω/squareor less, and even more specifically 1 Ω/square or more and 20 Ω/squareor less.

If the surface resistance of the conductive structure body is 1 Ω/squareor more and 300 Ω/square or less, there is an effect replacing a knownITO transparent electrode. In the case where the surface resistance ofthe conductive structure body is 1 Ω/square or more and 100 Ω/square orless or 1 Ω/square or more and 50 Ω/square or less, and particularly, inthe case where the surface resistance is 1 Ω/square or more and 20Ω/square or less, since the surface resistance is significantly low ascompared to the case where the known ITO transparent electrode is used,there are advantages in that a RC delay is reduced when a signal isapplied to significantly improve a touch recognition speed, andaccordingly, a touch screen having a large area of 10 inch or more maybe easily applied.

In the conductive structure body, the surface resistance of theconductive layer or the darkening layer before patterning may be morethan 0 Ω/square and 2 Ω/square or less, and specifically more than 0Ω/square and 0.7 Ω/square or less. If the surface resistance is 2Ω/square or less, and particularly 0.7 Ω/square or less, designing offine patterning and manufacturing process are easily performed as thesurface resistance of the conductive layer or the darkening layer beforepatterning is decreased, and there is an effect that a response speed ofthe electrode is increased by decreasing the surface resistance of theconductive structure body after patterning.

In the exemplary embodiment of the present invention, a pin hole may notbe present in the conductive structure body, and even though the pinhole is present, a diameter thereof may be 3 μm or less, and morespecifically 1 μm or less. As described above, in the case where the pinhole is not present in the conductive structure body or the diameter ofthe pin hole is 3 μm or less, occurrence of a short-circuit may beprevented.

In the exemplary embodiment of the present invention, the darkeningpattern layer may be provided on any one surface or both surfaces of theconductive pattern.

In the exemplary embodiment of the present invention, the darkeningpattern layer and the conductive pattern layer may be simultaneously orseparately patterned.

In the exemplary embodiment of the present invention, the darkeningpattern layer and conductive pattern layer may form a laminate structureby a simultaneous or separate patterning process. In this regard, thelaminate structure may be differentiated from a structure where at leasta portion of a light absorption material is incorporated or dispersed inthe conductive pattern, or a structure where a portion at a surface sideof the conductive pattern of the single layer is physically orchemically modified by an additional surface treatment.

In addition, in the conductive structure body according to the exemplaryembodiment of the present invention, the darkening pattern layer may bedirectly provided on the substrate or the conductive pattern layer whilean attachment layer or adhesive layer is not interposed therebetween.The attachment layer or adhesive layer may affect durability or opticalproperties. In addition, a method for manufacturing the conductivestructure body according to the exemplary embodiment of the presentinvention is significantly different from that of the case where theattachment layer or adhesive layer is used. Moreover, in the exemplaryembodiment of the present invention, an interface property between thesubstrate or conductive pattern layer and the darkening pattern layer isexcellent as compared to the case where the attachment layer or adhesivelayer is used.

In the exemplary embodiment of the present invention, the thickness ofthe darkening pattern layer may be 10 nm or more and 400 nm or less,specifically 30 nm or more and 300 nm or less, and more specifically 50nm or more and 100 nm or less. The preferable thickness may be changedaccording to the used material and manufacturing process, but inconsideration of an etching property, if the thickness is less than 10nm, process control may not be easy, and if the thickness is more than400 nm, there may be a disadvantage in terms of production speed.Specifically, in the case where the thickness is 30 nm or more and 300nm or less, the process control is easy and the production speed isincreased, such that there is an advantage in terms of manufacturingprocess. If the thickness of the darkening pattern layer is 50 nm ormore and 100 nm or less, there is a useful effect in that thereflectance is decreased to facilitate formation of the darkening layer.

In the exemplary embodiment of the present invention, the darkeningpattern layer may be formed of a single layer, or a plurality of layersof two or more layers.

In the exemplary embodiment of the present invention, it is preferablethat the darkening pattern layer has an achromatic color. In this case,the achromatic color means a color exhibited when light that is incidenton a surface of a body is not selectively absorbed but reflected andabsorbed uniformly to a wavelength of each component.

In the exemplary embodiment of the present invention, the darkeningpattern layer may further comprise at least one of a dielectricmaterial, metal and mixture thereof. Examples of the dielectric materialmay comprise SiO, SiO₂, MgF₂, SiNz (z is an integer of 1 or more), andthe like, but are not limited thereto. Examples of the metal maycomprise Fe, Co, Ti, V, Cu, Al, Au, Ag, and the like, but are notlimited thereto. According to the exemplary embodiment of the presentinvention, the darkening pattern layer may further comprise one or moreof the dielectric materials and one or more of metals.

In the exemplary embodiment of the present invention, it is preferablethat the dielectric material be distributed in an amount graduallydecreased as the dielectric material becomes more distant from anincident direction of external light and the metal be distributed inopposite manner thereof. In this case, the content of the dielectricmaterial may be 20 to 50 wt % and the content of the metal may be 50 to80 wt %.

In the exemplary embodiment of the present invention, the darkeningpattern layer may be provided on any one surface or both surfaces of theconductive pattern layer. Herein, the darkening pattern layer may have apattern having the same shape as the conductive pattern layer. However,the pattern size of the darkening pattern layer does not need to becompletely identical to the conductive pattern layer, and the case wherethe line width of the darkening pattern layer is narrower or wider ascompared to the line width of the conductive pattern layer is alsoincluded in the scope of the present invention.

In the exemplary embodiment of the present invention, the darkeningpattern layer may have a pattern shape having the line width that isidentical with or larger than the line width of the conductive patternlayer. For example, the area of the darkening pattern layer may be 80 to120% of an area occupied by the conductive pattern layer.

In the case where the darkening pattern layer has the pattern shapehaving the larger line width than that of the conductive pattern layer,since an effect in which the darkening pattern layer covers theconductive pattern layer when observed by the user may be enlarged,there is an advantage in that an effect by gloss or reflection of theconductive pattern layer may be efficiently blocked. However, eventhough the line width of the darkening pattern layer is the same as theline width of the conductive pattern layer, a target effect of thepresent invention can be accomplished.

In the conductive structure body according to the exemplary embodimentof the present invention, a transparent board may be used as thesubstrate, but the substrate is not particularly limited, and forexample, glass, a plastic board, a plastic film, and the like may beused.

In the conductive structure body according to the exemplary embodimentof the present invention, it is preferable that the material of theconductive pattern layer comprise at least one of metal, a metal alloy,metal oxides, metal nitrides and mixture thereof, and the like. It ispreferable that the material of the conductive pattern layer be metallicmaterial that has excellent electric conductivity and is easily etched.However, in general, the material having excellent electric conductivityhas a disadvantage in that reflectance is high. However, in theexemplary embodiment of the present invention, it is possible to formthe conductive pattern layer using the material having high reflectanceby using the darkening pattern layer. In the exemplary embodiment of thepresent invention, in the case where the material having reflectance of70 to 80% or more is used, the darkening pattern layer may be added todecrease the reflectance, improve a concealing property of theconductive pattern layer, and maintain or improve a contrast property.

In the exemplary embodiment of the present invention, specific examplesof the material of the conductive pattern layer may comprise a singlefilm or multilayered film comprising at least one of silver, aluminum,copper, neodymium, molybdenum, nickel, alloys thereof, oxides thereof,nitrides thereof and mixture thereof, and the like, and more specificexamples thereof may comprise aluminum, but the specific examples arenot limited thereto.

In the exemplary embodiment of the present invention, the thickness ofthe conductive pattern layer is not particularly limited, but a bettereffect may be exhibited in terms of electric conductivity of theconductive pattern layer and economic efficiency of the process offorming the pattern when the thickness is 0.01 μm or more and 10 μm orless.

In the exemplary embodiment of the present invention, the line width ofthe conductive pattern layer may be more than 0 μm and 10 μm or less,specifically 0.1 μm or more and 10 μm or less, more specifically 0.2 μmor more to 8 μm or less, and even more specifically 0.5 μm or more to 5μm or less.

In the exemplary embodiment of the present invention, the opening ratioof the conductive pattern layer, that is, the ratio of the area notcovered by the pattern, may be 70% or more, 85% or more, and 95% ormore. In addition, the opening ratio of the conductive pattern layer maybe 90 to 99.9%, but is not limited thereto. In the exemplary embodimentof the present invention, the pattern of the conductive pattern layermay be a regular pattern or irregular pattern.

A pattern shape of the art such as a mesh pattern may be used as theregular pattern. The irregular pattern is not particularly limited, butmay be a boundary line shape of figures constituting a Voronoi diagram.In the exemplary embodiment of the present invention, in the case wherethe irregular pattern and the darkening pattern layer are used together,a diffracted pattern of reflected light by lighting having directivitymay be removed by the irregular pattern, and an effect of scatteringlight may be minimized by the darkening pattern layer, such that theproblem in visibility may be minimized.

In the exemplary embodiment of the present invention, when a straightline crossing the conductive pattern is drawn, a ratio of a standarddeviation to an average value of distances between adjacent intersectionpoints of the straight line and conductive pattern (distancedistribution ratio) may be 2% or more.

In the exemplary embodiment of the present invention, the conductivestructure body preventing Moiré and reflective diffraction phenomena andsatisfying excellent electric conductivity and optical property may beprovided by ensuring the conductive pattern where the ratio of thestandard deviation to the average value of distances between theadjacent intersection points of the straight line and the conductivepattern (distance distribution ratio) is 2% or more when the straightline crossing the pattern of the conductive pattern layer is drawn.

It is preferable that the straight line crossing the conductive patternbe a line in which the standard deviation of the distances betweenadjacent intersection points of the straight line and the conductivepattern has the smallest value. Alternately, the straight line crossingthe conductive pattern may be a straight line extending in a directionthat is perpendicular to the tangent line of any one point of theconductive patterns.

The ratio of the standard deviation to the average value of distancesbetween the adjacent intersection points of the straight line crossingthe conductive pattern and the conductive pattern (distance distributionratio) may be 2% or more, 10% or more, or 20% or more. The ratio of thestandard deviation to the average value of distances between theadjacent intersection points of the straight line crossing theconductive pattern and the conductive pattern (distance distributionratio) relates to irregularity of the conductive pattern, and in thecase where the ratio of the standard deviation is 2% or more, theconductive pattern may have an irregular pattern shape.

It is preferable that the pattern where the ratio of the standarddeviation to the average value of distances between the adjacentintersection points of the straight line crossing the conductive patternand the conductive pattern (distance distribution ratio) is 2% or moreoccupy 30% or more in respects to the entire area of the substrate.Another type of conductive pattern may be provided on at least a portionof the surface of the substrate that is provided with the conductivepattern described above.

In the exemplary embodiment of the present invention, there may be atleast 80 adjacent intersection points of the straight line crossing theconductive pattern and the conductive pattern.

In the exemplary embodiment of the present invention, the conductivepattern is formed of closed figures having a continuous distribution,and a ratio of a standard deviation to an average value of areas of theclosed figures (area distribution ratio) may be 2% or more.

In the exemplary embodiment of the present invention, there may be atleast 100 closed figures.

In the exemplary embodiment of the present invention, the ratio of thestandard deviation to the average value of areas of the closed figures(area distribution ratio) may be 2% or more, 10% or more, or 20% ormore. The ratio of the standard deviation to the average value of areasof the closed figures (area distribution ratio) relates to irregularityof the conductive pattern, and in the case where the ratio of thestandard deviation is 2% or more, the conductive pattern may have anirregular pattern shape.

It is preferable that the pattern that is formed of the closed figureswhere the ratio of the standard deviation to the average value of areasthereof (area distribution ratio) is 2% or more occupy 30% or more inrespects to the entire area of the substrate. Another type of conductivepattern may be provided on at least a portion of the surface of thesubstrate that is provided with the conductive pattern described above.

In the exemplary embodiment of the present invention, the conductivepattern layer comprises metal patterns crossing each other, and thenumber of intersection points between the metal patterns crossing eachother per unit area (cm²) of the conductive pattern layer may be 5 to10,000.

In the exemplary embodiment of the present invention, a pitch of theconductive patterns may be 600 μm or less or 250 μm or less, and may beadjusted according to transmittance and conductivity required by aperson with ordinary skill in the art.

In the exemplary embodiment of the present invention, the conductivepattern layer may be a material having specific resistance ofappropriately 1×10⁶ Ω·cm or more and 30×10⁶ Ω·cm or less, or 1×10⁶ Ω·cmor more and 7×10⁶ Ω·cm or less.

In the exemplary embodiment of the present invention, the pattern of theconductive pattern layer may have a boundary line shape of the figuresforming a Voronoi diagram. In the exemplary embodiment of the presentinvention, a Moiré phenomenon and a secondary diffraction phenomenon byreflected light may be prevented by forming the conductive pattern inthe boundary line shape of the figures forming the Voronoi diagram. TheVoronoi diagram refers to a pattern that is formed by filling theclosest area to the corresponding dot as compared to the distances ofeach dot from the other dots if Voronoi diagram generator dots aredisposed in a desired area to be filled. For example, when largediscount stores in the whole country are represented by dots andconsumers try to find the closest large discount store, the pattern thatdisplays the commercial area of each discount store may be exemplified.That is, if the space is filled with a regular hexagon and each dot ofthe regular hexagon is set by the Voronoi generator, a honeycombstructure may be the conductive pattern. In the exemplary embodiment ofthe present invention, in the case where the conductive pattern isformed by using the Voronoi diagram generator, there is a merit in thata complex pattern form that can prevent the Moiré phenomenon that may begenerated by an interference with another regular pattern may be easilydetermined. In the exemplary embodiment of the present invention, thepattern obtained from the generator may be used by regularly orirregularly positioning the Voronoi diagram generator. In the case ofwhen the conductive pattern is formed in a boundary line shape of thefigures forming the Voronoi diagram, in order to solve the recognitionproblem as described above, when the Voronoi diagram generator isgenerated, regularity and irregularity may be appropriately harmonized.For example, after the area having a predetermined size is set as thebasic unit in the area in which the pattern is to be provided, the dotsare generated so that the distribution of dots in the basic unit hasirregularity, thus manufacturing the Voronoi pattern. If theaforementioned method is used, the visibility may be compensated bypreventing the localization of the distribution of lines on any onepoint.

As described above, in the case where the opening ratio of the patternis made constant in the unit area for uniform conductivity andvisibility of the conductor, the number per unit area of the Voronoidiagram generator may be controlled. In this case, when the number perunit area of the Voronoi diagram generator is uniformly controlled, theunit area may be 5 cm² or less or 1 cm² or less. The number per unitarea of the Voronoi diagram generator may be in the range of 5 to 5,000generators/cm² or 100 to 2,500 generators/cm².

Among the figures forming the pattern in the unit area, at least one mayhave a shape different from the remaining figures.

In the exemplary embodiment of the present invention, the darkeningpattern layer and the conductive pattern layer may have a positive taperangle at a side thereof, but the darkening pattern layer disposed on anopposite surface at a side of the substrate of the conductive patternlayer or the conductive pattern layer may also have a negative taperangle.

Examples of the conductive structure body according to the exemplaryembodiment of the present invention are illustrated in the followingFIGS. 1 to 3. FIGS. 1 to 3 illustrate the order of lamination of thesubstrate, the conductive pattern layer, and the darkening patternlayer, and the conductive pattern layer and the darkening pattern layermay not have a front surface layer form but have a pattern shape whenbeing applied as a fine transparent electrode such as a touch screenpanel in practice.

According to FIG. 1, there is exemplified the case where a darkeningpattern layer 200 is interposed between a substrate 100 and a conductivepattern layer 300. In the case where the user observes the touch screenpanel from the substrate side, reflectance by the conductive pattern maybe largely decreased. According to FIG. 2, there is exemplified the casewhere the darkening pattern 200 is disposed on the conductive patternlayer 300. In the case where the user observes the touch screen panelfrom an opposite surface of the substrate side, reflectance by theconductive pattern may be largely decreased. According to FIG. 3, thereis exemplified the case where the darkening pattern layers 200 and 220are disposed between the substrate 100 and the conductive pattern layer300 and on the conductive pattern layer 300. In all the case where theuser observes the touch screen panel from the substrate side and thecase where the user observes the touch screen panel from the oppositeside thereof, the reflectance by the conductive pattern may be largelydecreased.

The conductive structure body according to the exemplary embodiment ofthe present invention may have a structure where the darkening patternlayer is provided on at least one surface of the conductive patternlayer.

The structure of the conductive structure body according to theexemplary embodiment of the present invention may be a structure wherethe substrate, the darkening pattern layer, the conductive patternlayer, and the darkening pattern layer are sequentially laminated. Inaddition, the conductive structure body may comprise additionalconductive pattern and darkening pattern on the darkening pattern of theoutermost portion thereof.

That is, the structure of the conductive structure body according to theexemplary embodiment of the present invention may be a structure ofsubstrate/darkening pattern layer/conductive pattern layer, a structureof substrate/conductive pattern layer/darkening pattern layer, astructure of substrate/darkening pattern layer/conductive patternlayer/darkening pattern layer, a structure of substrate/conductivepattern layer/darkening pattern layer/conductive pattern layer, astructure of substrate/darkening pattern layer/conductive patternlayer/darkening pattern layer/conductive pattern layer/darkening patternlayer, or a structure of substrate/darkening pattern layer/conductivepattern layer/darkening pattern layer/conductive pattern layer/darkeningpattern layer/conductive pattern layer/darkening pattern layer.

The method for manufacturing the conductive structure body according tothe exemplary embodiment of the present invention comprises forming aconductive pattern layer on a substrate; and forming a darkening patternlayer comprising AlOxNy (0≦x≦1.5, 0≦y≦1) before, after, or before andafter the conductive pattern layer is formed.

The method for manufacturing the conductive structure body according tothe exemplary embodiment of the present invention comprises forming aconductive pattern layer on a substrate; and forming a darkening patternlayer comprising AlOxNy (x>0, y>0) having an atomic ratio represented byEquation 1 before, after, or before and after the conductive patternlayer is formed.

X and y mean ratios of numbers of O and N atoms to one Al atom,respectively, in AlOxNy.

In the exemplary embodiment of the present invention, the method formanufacturing the conductive structure body may comprise forming adarkening pattern layer on a substrate, and forming a conductive patternlayer after the darkening pattern layer is formed.

In the exemplary embodiment of the present invention, the method formanufacturing the conductive structure body may comprise forming aconductive pattern layer on a substrate, and forming a darkening patternlayer after the conductive pattern layer is formed.

In the exemplary embodiment of the present invention, the method formanufacturing the conductive structure body may further comprise forminga darkening pattern layer on a substrate, forming a conductive patternlayer after the darkening pattern layer is formed, and forming adarkening pattern layer after the conductive pattern layer is formed.

In addition, the method for manufacturing the conductive structure bodyaccording to the exemplary embodiment of the present invention comprisesforming a conductive layer on a substrate; forming a darkening layercomprising AlOxNy (0≦x≦1.5, 0≦y≦1) before, after, or before and afterthe conductive layer is formed; and separately or simultaneouslypatterning the conductive layer and the darkening layer.

In addition, the method for manufacturing the conductive structure bodyaccording to the exemplary embodiment of the present invention comprisesforming a conductive layer on a substrate; forming a darkening layercomprising AlOxNy (x>0, y>0) having an atomic ratio represented byEquation 1 before, after, or before and after the conductive layer isformed; and separately or simultaneously patterning the conductive layerand the darkening layer.

X and y mean ratios of numbers of O and N atoms to one Al atom,respectively, in AlOxNy.

In the exemplary embodiment of the present invention, the method formanufacturing the conductive structure body may comprise forming adarkening layer on a substrate, forming a conductive layer after thedarkening layer is formed, and separately or simultaneously patterningthe darkening layer and the conductive layer.

In the exemplary embodiment of the present invention, the method formanufacturing the conductive structure body may comprise forming aconductive layer on a substrate, forming a darkening layer after theconductive pattern layer is formed, and separately or simultaneouslypatterning the darkening layer and the conductive layer.

In the exemplary embodiment of the present invention, the method formanufacturing the conductive structure body may comprise forming adarkening layer on a substrate, forming a conductive layer after thedarkening layer is formed, forming a darkening layer after theconductive layer is formed, and separately or simultaneously patterningthe darkening layer and the conductive layer.

In the exemplary embodiment of the present invention, the darkeningpattern layer or the darkening layer may be formed by using a methodthat is known in the art during the step of forming the darkeningpattern layer or the darkening layer, and more specifically a reactivesputtering method may be used, but the method is not limited thereto.

When the reactive sputtering method is used, the reaction condition maysatisfy the reaction condition represented by the following Equation 4.

$\begin{matrix}{{7(\%)} \leq {\frac{{con}.\left( N_{2} \right)}{{{con}.({Ar})} + {{con}.\left( N_{2} \right)}} \times 100(\%)} \leq {15(\%)}} & \left\lbrack {{Equation}\mspace{14mu} 4} \right\rbrack\end{matrix}$

wherein con.(Ar) and con.(N₂) mean contents of Ar and N₂ in a reactionchamber, respectively in Equation 4. con.(N₂)

Ar and N₂ each mean a content in the reaction chamber in Equation 4.

The content means a volume.

Specifically, Equation 4 shows a standard cubic centimeter per minute(sccm), which means a ratio of N₂ that is a reactive gas among all theplasma gases added into the reaction chamber.

In the exemplary embodiment of the present invention, in the case wherethe reaction condition satisfies Equation 4, the darkening layer may beformed. In the case where the reaction condition does not satisfyEquation 4, that is, if the value of Equation 4 is less than 7 as thecontent of nitrogen is relatively increased during the reactivesputtering process, a transparent thin film is formed, and if the valueof Equation 4 is more than 15 as the content of nitrogen is relativelydecreased, a thin film mostly consisting of metal may be formed.

In the case where the reactive sputtering method is used, various colorsmay be ensured according to a band gap of metal compound depending onflow ratios by controlling the flow ratios of oxygen and nitrogenwithout replacing an additional target, and it is possible to performdarkening that can improve a concealing property of the conductivepattern. In addition, the Al single target may be used, and accordingly,there are advantages in that the sputtering process is simplified andbatch etching can be performed by a general aluminum etching solutioneven during an etching process for fine electrode patterning.

In the exemplary embodiment of the present invention, the method forforming the conductive pattern layer is not particularly limited, andthe conductive pattern layer may be directly formed by a printingmethod, or a method for patterning the conductive thin film layer afterthe conductive thin film layer is formed may be used.

In the exemplary embodiment of the present invention, in the case wherethe conductive pattern layer is formed by using the printing method, inkor paste of the conductive material may be used, and the paste mayfurther comprise a binder resin, a solvent, a glass frit, or the like inaddition to the conductive material.

In the case where the conductive layer is patterned after the conductivelayer is formed, a material having an etching resist characteristic maybe used.

In the exemplary embodiment of the present invention, the conductivelayer may be formed by a method such as evaporation, sputtering, wetcoating, vaporization, electrolytic plating or electroless plating, andlamination of a metal foil. A method for applying organic metal, nanometal, or a complex solution thereof on the substrate and then providingconductivity by firing and/or drying may be used as the method forforming the conductive layer. Organic silver may be used as the organicmetal, and nano silver particles may be used as the nano metal.

In the exemplary embodiment of the present invention, the patterning ofthe conductive layer may be performed by using a method using an etchingresist pattern. The etching resist pattern may be formed by using aprinting method, a photolithography method, a photography method, amethod using a mask, or a laser transferring, for example, a thermaltransfer imaging, and the printing method or the photolithography methodis more preferable, but the method is not limited thereto. Theconductive thin film layer may be etched and patterned by using theetching resist pattern, and the etching resist pattern may be easilyremoved by a strip process.

The exemplary embodiment of the present invention provides a touchscreen panel including the conductive structure body. For example, theconductive structure body according to the exemplary embodiment of thepresent invention may be used as a touch-sensitive type electrode boardin a capacitance type touch screen panel.

The exemplary embodiment of the present invention provides a displaydevice including the touch screen panel.

The touch screen panel according to the exemplary embodiment of thepresent invention may further comprise an additional structure body inaddition to the aforementioned conductive structure body including thesubstrate, the conductive pattern layer, and the darkening patternlayer. In this case, two laminates may be disposed in the samedirection, or two structure bodies may be disposed in directions thatare opposite to each other. Two or more structure bodies that may becomprised in the touch screen panel according to the exemplaryembodiment of the present invention do not need to have the samestructure, and only any one and preferably the structure body that isclosest to the user may comprise the substrate, the conductive patternlayer, and the darkening pattern layer, and the additional structurebody may not comprise the darkening pattern layer. In addition, layerlaminate structures in two or more structure bodies may be differentfrom each other. In the case where two or more structure bodies arecomprised, an insulation layer may be interposed therebetween. In thiscase, the insulation layer may further have a function of an adhesivelayer.

The touch screen panel according to the exemplary embodiment of thepresent invention may comprise a lower substrate; an upper substrate;and an electrode layer provided on any one surface of a surface of thelower substrate that is in contact with the upper substrate and asurface of the upper substrate that is in contact with the lowersubstrate or both the surfaces. The electrode layer may perform the Xaxis and Y axis position detection functions.

In this case, one or two of the electrode layer provided on the lowersubstrate and the surface of the lower substrate that is in contact withthe upper substrate; and the electrode layer provided on the uppersubstrate and the surface of the upper substrate that is in contact withthe lower substrate may be the conductive structure body according tothe exemplary embodiment of the present invention. In the case whereonly any one of the electrode layers is the conductive structure bodyaccording to the exemplary embodiment of the present invention, theother one may have the pattern known in the art.

In the case where the electrode layer is provided on one surface of eachof both the upper substrate and the lower substrate to form twoelectrode layers, an insulation layer or a spacer may be providedbetween the lower substrate and the upper substrate so as to constantlymaintain an interval between the electrode layers and prevent connectiontherebetween. The insulation layer may comprise an adhesive or an UV orheat curable resin. The touch screen panel may further comprise a groundportion connected to the aforementioned conductive pattern. For example,the ground portion may be formed at an edge portion of the surface onwhich the conductive pattern of the substrate is formed. At least one ofan antireflection film, a polarizing film, and a fingerprint resistantfilm may be provided on at least one surface of the laminate includingthe conductive structure body. Other kinds of functional films may befurther comprised in addition to the aforementioned functional filmsaccording to the design specification. The touch screen panel may beapplied to display devices such as an OLED display panel (PDP), a liquidcrystal display (LCD), a cathode-ray tube (CRT), and a PDP.

In the touch screen panel according to the exemplary embodiment of thepresent invention, the conductive pattern layer and the darkeningpattern layer may be provided on both surfaces of the substrate,respectively.

The touch screen panel according to the exemplary embodiment of thepresent invention may further comprise an electrode portion or a padportion on the conductive structure body. In this case, the effectivescreen portion, the electrode portion, and the pad portion may be formedof the same conductor.

In the touch screen panel according to the exemplary embodiment of thepresent invention, the darkening pattern layer may be provided at a sideobserved by a user.

The exemplary embodiment of the present invention provides a solarbattery including the conductive structure body. The solar battery maycomprise an anode electrode, a cathode electrode, a photokinesis layer,a hole transport layer and/or an electron transport layer, and theconductive structure body according to the exemplary embodiment of thepresent invention may be used as the anode electrode and/or the cathodeelectrode.

The conductive structure body may be used instead of a known ITO in thedisplay device or the solar battery, and may be used to provideflexibility. In addition, the conductive structure body may be used as anext generation transparent electrode in conjunction with CNT,conductive polymers, graphene and the like.

Hereinafter, the present invention will be described in detail withreference to Examples, Comparative Examples, and Experimental Examples.However, the following Examples, Comparative Examples, and ExperimentalExamples are set forth to illustrate the present invention, but thescope of the present invention is not limited thereto.

Examples 1 and 2

After the darkening layer including AlOxNy (0≦x≦1.5, 0≦y≦1) was formedby the reactive sputtering method using the Al single target on thepolyethylene terephthalate (PET) substrate, the Al layer was formed as aconductive thin film layer, and the darkening layer including AlOxNy(0≦x≦1.5, 0≦y≦1) was formed by the reactive sputtering method using theAl single target to manufacture conductive structure bodies of Examples1 and 2.

Comparative Example 1

The conductive structure body was manufactured by using the same methodas Examples 1 and 2, except that the Mo layer was formed instead offorming the darkening layer including AlOxNy (0≦x≦1.5, 0≦y≦1) in Example1.

Examples 1 and 2 and Comparative Example 1 are described in thefollowing Table 1.

TABLE 1 Formation of the darkening layer x y Reflectance Example 1 0.40.6 5.3 Example 2 0.3 0.8 12.5 Comparative Formation of the Mo layer39.9 Example 1

Experimental Example

The atomic percent according to the etching time of the darkening layerincluding AlOxNy (0.1≦x≦1.5, 0.1≦y≦1) of Example 1 was analyzed, andillustrated in the following FIG. 4. The ratios of oxygen and nitrogenper one Al atom, that is, the average ratio of x and y, in the darkeninglayer may be obtained through the analysis.

In addition, reflectance of the conductive structure bodies of Example 1and Comparative Example 1 was measured, and shown in the following FIG.5. The reflectance was 5.3%, which was very excellent, based on 550 nmin Example 1.

The conductive structure body according to the exemplary embodiment ofthe present invention and the touch screen panel including the same mayprevent reflection by the conductive pattern without affectingconductivity of the conductive pattern and improve a concealing propertyof the conductive pattern by improving absorbance by introducing thedarkening pattern including AlOxNy on at least one surface of theconductive pattern.

In addition, a contrast property of the touch screen panel may befurther improved by introducing the darkening pattern as describedabove. In addition, since the reactive sputtering method is used duringthe process for manufacturing the darkening pattern including AlOxNy,the Al single target may be used. Accordingly, there are advantages inthat a sputtering process is simplified and batch etching can beperformed by a general aluminum etching solution even during an etchingprocess for fine electrode patterning.

It will be apparent to those skilled in the art that variousmodifications and changes may be made without departing from the scopeand spirit of the invention.

Therefore, it should be understood that the above embodiment is notlimitative, but illustrative in all aspects. The scope of the inventionis defined by the appended claims rather than by the descriptionpreceding them, and therefore all changes and modifications that fallwithin metes and bounds of the claims, or equivalents of such metes andbounds are therefore intended to be embraced by the claims.

DESCRIPTION OF REFERENCE NUMERALS

-   -   100: Substrate    -   200: Darkening pattern layer    -   220: Darkening pattern layer    -   300: Conductive pattern layer

1. A conductive structure body, comprising: a substrate; a conductivepattern layer; and a darkening pattern layer comprising AlO_(x)N_(y)(0≦x≦1.5, 0≦y≦1), wherein x and y mean ratios of numbers of O and Natoms to one Al atom, respectively.
 2. The conductive structure bodyaccording to claim 1, wherein a thickness of the darkening pattern layeris 10 nm or more and 400 nm or less.
 3. The conductive structure bodyaccording to claim 1, wherein the darkening pattern layer furthercomprises at least one selected from the group consisting of adielectric material, metal and mixture thereof.
 4. The conductivestructure body according to claim 3, wherein the dielectric material isselected from the group consisting of SiO, SiO₂, MgF₂, and SiNz (z is aninteger of 1 or more).
 5. The conductive structure body according toclaim 3, wherein the metal is selected from the group consisting of Fe,Co, Ti, V, Cu, Al, Au, and Ag.
 6. The conductive structure bodyaccording to claim 1, wherein the darkening pattern layer has an area of80 to 120% of an area where the conductive pattern layer is occupied. 7.The conductive structure body according to claim 1, wherein a line widthof the darkening pattern layer is the same as or larger than a linewidth of the conductive pattern layer.
 8. The conductive structure bodyaccording to claim 1, wherein total reflectance measured in a directionof an opposite surface of a surface of the darkening pattern layer,which is in contact with the conductive pattern layer, is 20% or less.9. The conductive structure body according to claim 1, wherein thedarkening pattern layer is provided between the conductive pattern layerand the substrate, and the total reflectance measured at a side of thesubstrate is 20% or less.
 10. The conductive structure body according toclaim 1, wherein surface resistance of the conductive structure body is1 Ω/square or more and 300 Ω/square or less.
 11. The conductivestructure body according to claim 1, wherein the conductive patternlayer comprises at least one selected from the group consisting ofmetal, a metal alloy, metal oxide, metal nitride and mixture thereof.12. The conductive structure body according to claim 1, wherein theconductive pattern layer comprises at least one selected from the groupconsisting of silver, aluminum, copper, neodymium, molybdenum, nickel,alloys thereof, oxides thereof, nitrides thereof and mixture thereof.13. The conductive structure body according to claim 1, wherein athickness of the conductive pattern layer is 0.01 μm or more and 10 μmor less.
 14. The conductive structure body according to claim 1, whereina line width of the conductive pattern layer is 10 μm or less.
 15. Theconductive structure body according to claim 1, wherein the conductivepattern layer comprises a regular pattern.
 16. The conductive structurebody according to claim 1, wherein the conductive pattern layercomprises an irregular pattern.
 17. A method for manufacturing aconductive structure body, comprising: forming a conductive patternlayer on a substrate; and forming a darkening pattern layer comprisingAlO_(x)N_(y) (0≦x≦1.5, 0≦y≦1) before, after, or before and after theconductive pattern layer is formed, wherein x and y mean ratios ofnumbers of O and N atoms to one Al atom, respectively, in AlOxNy.
 18. Amethod for manufacturing a conductive structure body, comprising:forming a conductive layer on a substrate; forming a darkening layercomprising AlO_(x)N_(y) (0≦x≦1.5, 0≦y≦1) before, after, or before andafter the conductive layer is formed; and separately or simultaneouslypatterning the conductive layer and the darkening layer, wherein x and ymean ratios of numbers of O and N atoms to one Al atom, respectively, inAlO_(x)N_(y).
 19. The method for manufacturing a conductive structurebody according to claim 18, wherein surface resistance of the conductivestructure or the darkening layer is more than 0 Ω/square and 2 Ω/squareor less.
 20. A touch screen panel, comprising: the conductive structurebody according to claim
 1. 21. A display device, comprising: theconductive structure body according to claim
 1. 22. A solar battery,comprising: the conductive structure body according to claim
 1. 23. Aconductive structure body, comprising: a substrate; a conductive patternlayer; and a darkening pattern layer comprising AlO_(x)N_(y) (0<x, 0<y)that satisfies an atomic ratio represented by the following Equation 1:$\begin{matrix}{1 < \frac{({Al}){at} \times 3}{{(O){at} \times 2} + {(N){at} \times 3}} < 2} & \left\lbrack {{Equation}\mspace{14mu} 1} \right\rbrack\end{matrix}$ x and y mean ratios of numbers of O and N atoms to one Alatom, respectively, and (Al)at represents an atomic content (at %) ofAl, (O)at represents an atomic content (at %) of O, and (N)at representsan atomic content (at %) of N based on 100% of a content of all atomsrepresented by AlO_(x)N_(y).